[A-2-5] Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces

Yuuichi Kamimuta, Masato Koyama, Tsunehiro Ino, Katsuyuki Sekine, Motoyuki Sato, Kazuhiro Eguchi, Mariko Takayanagi, Mitsuhiro Tomita, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 3.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2005.A-2-5