[A-2-5] Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces

Yuuichi Kamimuta、Masato Koyama、Tsunehiro Ino、Katsuyuki Sekine、Motoyuki Sato、Kazuhiro Eguchi、Mariko Takayanagi、Mitsuhiro Tomita、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company、3.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2005.A-2-5