Dielectric Constant Behavior of Hf-O-N System

Tsunehiro Ino; Yuuichi Kamimuta; Masamichi Suzuki; Masato Koyama; Akira Nishiyama

doi:https://doi.org/10.7567/SSDM.2005.A-3-1

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[A-3-1] Dielectric Constant Behavior of Hf-O-N System

Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, Masato Koyama, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation)

https://doi.org/10.7567/SSDM.2005.A-3-1

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