Nanoscale Observations for Degradation Phenomena in SiO2 and High－k Gate lnsulators Using Conductive－Atomic Force Microscopy

Shigeaki Zaima; Akiyoshi Seko; Yukihiko Watanabe; Toshifumi Sago; Mitsuo Sakashita; Hiroki Kondo; Akira Sakai; Masaki Ogawa

doi:https://doi.org/10.7567/SSDM.2005.A-4-1

[A-4-1] Nanoscale Observations for Degradation Phenomena in SiO2 and High－k Gate lnsulators Using Conductive－Atomic Force Microscopy

Shigeaki Zaima、Akiyoshi Seko、Yukihiko Watanabe、Toshifumi Sago、Mitsuo Sakashita、Hiroki Kondo、Akira Sakai、Masaki Ogawa (1.Graduate School of Engineering, Nagoya University、2.Toyota Central R＆D Labs., Inc.、3.Center for Cooperative Research in Advanced Science＆Technology, Nagoya University)

https://doi.org/10.7567/SSDM.2005.A-4-1

2005 International Conference on Solid State Devices and Materials

[A-4-1] Nanoscale Observations for Degradation Phenomena in SiO2 and High－k Gate lnsulators Using Conductive－Atomic Force Microscopy