[A-5-3] Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics

Kenji OKADA、Hiroyuki OTA、Tsuyoshi HORIKAWA、Yasuyuki TAMURA、Takaoki SASAKI、Tomonori AOYAMA、Fumio OOTSUKA、Akira TORIUMI (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.Department of Materials Science, The University of Tokyo、4.Semiconductor Leading Edge Technologies (Selete))

https://doi.org/10.7567/SSDM.2005.A-5-3