[A-6-1] A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS

Yoshiki Yamamoto、Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2005.A-6-1