[A-9-3] First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO2 interfaces

T. Nakaoka、K. Shiraishi、Y. Akasaka、T. Chikyow、K. Yamada、Y. Nara (1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba、2.National Institute for Materials Science、3.Semiconductor Leading Edge Technology Inc.、4.Nanotechnology Research Laboratories, Waseda University)

https://doi.org/10.7567/SSDM.2005.A-9-3