Theoretical analysis of the Fermi level pinning in HfO2/Si system induced by the interface defect states

Minoru Ikeda; Georg Kresse; Toshihide Nabatame; Akira Toriumi

doi:https://doi.org/10.7567/SSDM.2005.A-9-4

[A-9-4] Theoretical analysis of the Fermi level pinning in HfO2/Si system induced by the interface defect states

Minoru Ikeda、Georg Kresse、Toshihide Nabatame、Akira Toriumi (1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET)、2.Institut fur Materialphysik, Univeisitat Wien、3.MIRAI-AIST、4.University of Tokyo)

https://doi.org/10.7567/SSDM.2005.A-9-4

2005 International Conference on Solid State Devices and Materials

[A-9-4] Theoretical analysis of the Fermi level pinning in HfO2/Si system induced by the interface defect states