Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

Shinichi Takagi; Koji Takeda; Satoshi Sugahara; Toshinori Numata

doi:https://doi.org/10.7567/SSDM.2005.B-2-1

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[B-2-1] Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

Shinichi Takagi、Koji Takeda、Satoshi Sugahara、Toshinori Numata (1.Graduate School of Frontier Science、2.School of Engineering, The Univ. of Tokyo、3.MIRAI(ASET))

https://doi.org/10.7567/SSDM.2005.B-2-1

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