Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

Shinichi Takagi; Koji Takeda; Satoshi Sugahara; Toshinori Numata

doi:https://doi.org/10.7567/SSDM.2005.B-2-1

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[B-2-1] Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

Shinichi Takagi, Koji Takeda, Satoshi Sugahara, Toshinori Numata (1.Graduate School of Frontier Science, 2.School of Engineering, The Univ. of Tokyo, 3.MIRAI(ASET))

https://doi.org/10.7567/SSDM.2005.B-2-1

▲