Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices

Cheng Weitao; Akinobu Teramoto; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2005.B-3-1

[B-3-1] Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices

Cheng Weitao、Akinobu Teramoto、Masaki Hirayama、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University.)

https://doi.org/10.7567/SSDM.2005.B-3-1

2005 International Conference on Solid State Devices and Materials

[B-3-1] Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices