[B-7-2] Improved oxidation-induced Ge condensation technique by using H+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

Masanori Ikishima、Isao Tsunoda、Taizoh Sadoh、Toyotsugu Enokida、Masaharu Ninomiya、Masahiko Nakamae、Masanobu Miyao (1.Department of Electronics, Kyushu University、2.Analyses & Evaluation Center, Fukuryo Semicon Engineering Corporation、3.SUMCO、4.SUMCO)

https://doi.org/10.7567/SSDM.2005.B-7-2