[B-7-2] Improved oxidation-induced Ge condensation technique by using H+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

Masanori Ikishima, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao (1.Department of Electronics, Kyushu University, 2.Analyses & Evaluation Center, Fukuryo Semicon Engineering Corporation, 3.SUMCO, 4.SUMCO)

https://doi.org/10.7567/SSDM.2005.B-7-2