The Japan Society of Applied Physics

[B-8-1] Explanation of Negative Bias Temperature Instability Mechanism in p-MOSFETs by Reaction-Diffusion Model

S. Mahapatra, S. Sharma, P. Bharath Kumar, D. Varghese, D. Saha (1.Department of Electrical Engineering, IIT)

https://doi.org/10.7567/SSDM.2005.B-8-1