[C-7-1] Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors

Rinus T.P. Lee、S.L. Liew、B. Balakrisnan、K.Y. Lee、Yee-Chia Yeo、D.Z. Chi (1.Institute of Materials Research and Engineering、2.Silicon Nano Device Lab, Dept of Electrical and Computer Engineering, National University of Singapore)

https://doi.org/10.7567/SSDM.2005.C-7-1