Dopant Redistribution at Nickel Silicide/Silicon Interface

Takashi Yamauchi; Atsuhiro Kinoshita; Kazuya Ohuchi; Koichi Kato

doi:https://doi.org/10.7567/SSDM.2005.C-9-1

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[C-9-1] Dopant Redistribution at Nickel Silicide/Silicon Interface

Takashi Yamauchi、Atsuhiro Kinoshita、Kazuya Ohuchi、Koichi Kato (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.C-9-1

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