Dopant Redistribution at Nickel Silicide/Silicon Interface

Takashi Yamauchi; Atsuhiro Kinoshita; Kazuya Ohuchi; Koichi Kato

doi:https://doi.org/10.7567/SSDM.2005.C-9-1

[C-9-1] Dopant Redistribution at Nickel Silicide/Silicon Interface

Takashi Yamauchi, Atsuhiro Kinoshita, Kazuya Ohuchi, Koichi Kato (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.C-9-1

2005 International Conference on Solid State Devices and Materials

[C-9-1] Dopant Redistribution at Nickel Silicide/Silicon Interface