The Japan Society of Applied Physics

[E-2-4] MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2 μm Wavelength Region grown on InP Substrates

Yuichi Kawamura, Tomokatsu Nakagawa, Naohisa Inoue (1.Frontier Science Innovation Center Osaka Prefecture University, 2.CREST, Japan Science and Technology Agency)

https://doi.org/10.7567/SSDM.2005.E-2-4