MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2 μm Wavelength Region grown on InP Substrates

Yuichi Kawamura; Tomokatsu Nakagawa; Naohisa Inoue

doi:https://doi.org/10.7567/SSDM.2005.E-2-4

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[E-2-4] MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2 μm Wavelength Region grown on InP Substrates

Yuichi Kawamura、Tomokatsu Nakagawa、Naohisa Inoue (1.Frontier Science Innovation Center Osaka Prefecture University、2.CREST, Japan Science and Technology Agency)

https://doi.org/10.7567/SSDM.2005.E-2-4

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