High Power Operation of 660-nm Laser Diodes with a Long Cavity

K. Shibata; H. Nishiguchi; Y. Yoshida; M. Sasaki; K. Ono; T. Yagi; A. Shima

doi:https://doi.org/10.7567/SSDM.2005.E-2-6

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[E-2-6] High Power Operation of 660-nm Laser Diodes with a Long Cavity

K. Shibata, H. Nishiguchi, Y. Yoshida, M. Sasaki, K. Ono, T. Yagi, A. Shima (1.High Frequency & Optical Device Works, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2005.E-2-6

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