Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate

Toshihiro Matsuda; Takashi Ibe; Kiyoshi Nishihara; Hideyuki Iwata; Satoshi Iwatsubo; Takashi Ohzone

doi:https://doi.org/10.7567/SSDM.2005.E-4-2

[E-4-2] Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate

Toshihiro Matsuda, Takashi Ibe, Kiyoshi Nishihara, Hideyuki Iwata, Satoshi Iwatsubo, Takashi Ohzone (1.Department of Electronics and Informatics, Toyama Prefectural University, 2.Central Research Institute, Toyama Industrial Technology Center, 3.Department of Communication Engineering, Okayama Prefectural University)

https://doi.org/10.7567/SSDM.2005.E-4-2

2005 International Conference on Solid State Devices and Materials

[E-4-2] Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate