Studies on the Nature of Deep Level Defects in GaCrN Diluted Magnetic Semiconductor

S. Shanthi; S. Kimura; S. Kobayashi; M. S. Kim; Y. K. Zhou; H. Hasegawa; H. Asahi

doi:https://doi.org/10.7567/SSDM.2005.F-1-5

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[F-1-5] Studies on the Nature of Deep Level Defects in GaCrN Diluted Magnetic Semiconductor

S. Shanthi, S. Kimura, S. Kobayashi, M. S. Kim, Y. K. Zhou, H. Hasegawa, H. Asahi (1.The Institute of Scientific and Industrial Research, Osaka University)

https://doi.org/10.7567/SSDM.2005.F-1-5

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