Fabrication of the low operating voltage Poly(3-hexylthiophene) transistor using sputtering Al2O3/HfO2/Al2O3 stacking insulator

C.H. Lin; K.C. Li; J.P. Hu; K.C. Liu

doi:https://doi.org/10.7567/SSDM.2005.F-10-1

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[F-10-1] Fabrication of the low operating voltage Poly(3-hexylthiophene) transistor using sputtering Al2O3/HfO2/Al2O3 stacking insulator

C.H. Lin、K.C. Li、J.P. Hu、K.C. Liu (1.Department of Electro-Optical, Chang Gung University、2.Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2005.F-10-1

▲