Hetero-Epitaxial Growth of GaN onto SiC-on-SIMOX Substrates

T. Yokoyama; T. Egawa; K. Oouchi; M. Nakao; T. Shirahata; S. Kobayashi; K. Izumi

doi:https://doi.org/10.7567/SSDM.2005.F-2-8L

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[F-2-8L] Hetero-Epitaxial Growth of GaN onto SiC-on-SIMOX Substrates

T. Yokoyama, T. Egawa, K. Oouchi, M. Nakao, T. Shirahata, S. Kobayashi, K. Izumi (1.Air Water Inc., 2.Nagoya Institute of Technology, 3.Osaka Prefecture University)

https://doi.org/10.7567/SSDM.2005.F-2-8L

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