[F-3-2] Formation of Germanium-Rich Nanodots by Selective Oxidation of An As-Deposited Thin Hydrogenated Amorphous Silicon-Germanium Layer

S. Y. Lo、P. J. Wu、R. H. Yeh、J. W. Hong (1.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2005.F-3-2