[F-4-3] Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake, Yasuji Nakahama, Yusuke Ebata, Kumayasu Yoshii, Yuzo Mori (1.Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng., 2.SHARP Corporation, Production technology development center)

https://doi.org/10.7567/SSDM.2005.F-4-3