[F-9-5] Device Characteristics of FETs Made From a p-doped Polythiophene Solution

Satoshi Hoshino, Manabu Yoshida, Sei Uemura, Takehito Kodzasa, Toshihide Kamata (1.Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2005.F-9-5