Device Characteristics of FETs Made From a p-doped Polythiophene Solution

Satoshi Hoshino; Manabu Yoshida; Sei Uemura; Takehito Kodzasa; Toshihide Kamata

doi:https://doi.org/10.7567/SSDM.2005.F-9-5

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[F-9-5] Device Characteristics of FETs Made From a p-doped Polythiophene Solution

Satoshi Hoshino、Manabu Yoshida、Sei Uemura、Takehito Kodzasa、Toshihide Kamata (1.Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2005.F-9-5

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