[G-2-6] Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases

T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, S. Miyazaki (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2005.G-2-6