[G-2-6] Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases

T. Nagai、M. Ikeda、Y. Shimizu、S. Higashi、S. Miyazaki (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2005.G-2-6