Fabrication of Defect-Free Sub-10 nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process

Tomohiro Kubota; Jem-Kun Chen; Yukiharu Uraoka; Takashi Fuyuki; Ichiro Yamashita; Satoshi Yamasaki; Seiji Samukawa

doi:https://doi.org/10.7567/SSDM.2005.G-5-1

[G-5-1] Fabrication of Defect-Free Sub-10 nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process

Tomohiro Kubota, Jem-Kun Chen, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, Satoshi Yamasaki, Seiji Samukawa (1.Institute of Fluid Science, Tohoku University, 2.Graduate School of Materials Science, Nara Institute of Science and Technology, 3.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 4.Diamond Research Center, National Institute of Advanced Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2005.G-5-1

2005 International Conference on Solid State Devices and Materials

[G-5-1] Fabrication of Defect-Free Sub-10 nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process