Phonon Limited Electron Transport In SoI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves

Shigeyasu Uno; Nobuya Mori

doi:https://doi.org/10.7567/SSDM.2005.G-5-6

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[G-5-6] Phonon Limited Electron Transport In SoI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves

Shigeyasu Uno, Nobuya Mori (1.School of Mathematical Sciences, Claremont Graduate University, 2.Department of Electronic Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2005.G-5-6

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