[G-7-3] Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiNx Passivation Films Formed by Catalytic Chemical Vapor Deposition

Daisuke Kaminishi, Hirokazu Ozaki, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhiro Seri, Atsushi Masuda, Hideki Matsumura, Toshikazu Niki (1.The Intitute of Scientific and Industrial Research, Osaka University, 2.Japan Advanced Institute of Science and Technology, 3.Ishikawa Seisakusho, Ltd.)

https://doi.org/10.7567/SSDM.2005.G-7-3