[H-1-4] Performance and Reliability of MIM (Metal-Insulator-Metal)　Capacitors with ZrO2 for 50nm DRAM Application

Kyoung-Ryul Yoon、Ki-Vin Im、Jea-Hyun Yeo、Eun-Ae Chung、Young-Sun Kim、Cha-Young Yoo、Sung-Tae Kim、U-In Chung、Joo-Tae Moon (1.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2005.H-1-4