[H-2-4] Program Boosting with Local Short-Channel-Effect (LSCE) Unique to Charge Trapping Memory Using Hot-Carrier-Injection

T. Kobayashi, H. Tomiye, O. Oka, H. Futai, S. Hara, I. Fujiwara, K. Koyama, T. Oda (1.Semiconductor Technolory Development Group, Semiconductor Solutions Network Company, Sony Corporation, 2.Sony Semiconductor Kyushu Corporation)

https://doi.org/10.7567/SSDM.2005.H-2-4