[H-2-4] Program Boosting with Local Short-Channel-Effect (LSCE) Unique to Charge Trapping Memory Using Hot-Carrier-Injection

T. Kobayashi、H. Tomiye、O. Oka、H. Futai、S. Hara、I. Fujiwara、K. Koyama、T. Oda (1.Semiconductor Technolory Development Group, Semiconductor Solutions Network Company, Sony Corporation、2.Sony Semiconductor Kyushu Corporation)

https://doi.org/10.7567/SSDM.2005.H-2-4