[H-3-1] High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S3 (Stacked Single-crystal Silicon) Technology and KrF lithography

Kunho Kwak、Wonseok Cho、Jonghyuk Kim、Jaejoo Shim、Hoon Lim、Jaehoon Jeong、Changmin Hong、Jinho Kim、Hoosung Cho、Bonghyun Choi、Jooyoung Kim、Sunghyun Kwon、Soon-moon Jung、Kinam Kim (1.Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2005.H-3-1