The Japan Society of Applied Physics

[H-8-1] Fabrication and Characterization of Ferroelectric Gate Field Effect Transistor Memory Based on Ferroelectric-Insulator Interface Conduction

Bong-Yeon Lee、Ikemori Shin-ichi、Minoru Noda、Masanori Okuyama (1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2005.H-8-1