[H-9-3] Self-aligned MTJ etching technique using side walls for high-density 8F2 MRAMs

M. Yoshikawa、M. Amano、T. Ueda、E. Kiatagawa、S. Takahashi、T. Kai、T. Kishi、N. Shimomura、H. Aikawa、T. Kajiyama、K. Hosotani、Y. Asao、K. Suemitsu、H. Hada、S. Tahara、H. Yoda (1.Corporate Research & Development Center, Toshiba Corporation、2.SoC Research & Development Center, Toshiba Corporation、3.System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2005.H-9-3