Enhanced Breakdown Characteristic of AlGaN/GaN HEMTs Using a Gate/Drain Double Field-Plate Structure

Seunghun Kim; Kyounghoon Yang

doi:https://doi.org/10.7567/SSDM.2005.I-1-4

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[I-1-4] Enhanced Breakdown Characteristic of AlGaN/GaN HEMTs Using a Gate/Drain Double Field-Plate Structure

Seunghun Kim、Kyounghoon Yang (1.Division of Electrical Engineering, Dept. of Electrical Engineering and Computer Science (EECS), Korea Advanced Institute of Science and Technology (KAIST))

https://doi.org/10.7567/SSDM.2005.I-1-4

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