High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages

Shuichi Yagi; Masaki Inada; Yuki Yamamoto; Guanxi Piao; Yoshiki Yano; Kazunori Hikosaka; Mitsuaki Shimizu; Hajime Okumura

doi:https://doi.org/10.7567/SSDM.2005.I-1-6

[I-1-6] High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages

Shuichi Yagi, Masaki Inada, Yuki Yamamoto, Guanxi Piao, Yoshiki Yano, Kazunori Hikosaka, Mitsuaki Shimizu, Hajime Okumura (1.National Institute of Advanced Industrial Science and Technology, 2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

https://doi.org/10.7567/SSDM.2005.I-1-6

2005 International Conference on Solid State Devices and Materials

[I-1-6] High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages