[I-1-6] High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages

Shuichi Yagi、Masaki Inada、Yuki Yamamoto、Guanxi Piao、Yoshiki Yano、Kazunori Hikosaka、Mitsuaki Shimizu、Hajime Okumura (1.National Institute of Advanced Industrial Science and Technology、2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

https://doi.org/10.7567/SSDM.2005.I-1-6