[I-2-7L] AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators

Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura (1.Fujitsu Laboratories Ltd., 2.National Institute of Information and Communications Technology (NICT), 3.Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2005.I-2-7L