[I-2-7L] AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators

Akira Endoh、Yoshimi Yamashita、Nobumitsu Hirose、Kohki Hikosaka、Toshiaki Matsui、Satoshi Hiyamizu、Takashi Mimura (1.Fujitsu Laboratories Ltd.、2.National Institute of Information and Communications Technology (NICT)、3.Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2005.I-2-7L