Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire

Masayuki Kuroda; Hidetoshi Ishida; Tetsuzo Ueda; Tsuyoshi Tanaka

doi:https://doi.org/10.7567/SSDM.2005.I-5-2

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[I-5-2] Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire

Masayuki Kuroda、Hidetoshi Ishida、Tetsuzo Ueda、Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2005.I-5-2

▲