[I-5-3] AlGaN/GaN HEMTs with inclined-gate-recess structure

Y. Aoi, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.2005.I-5-3