[I-5-4] Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate

Yang Liu、Takashi Egawa、Hao Jiang、Hiroyasu Ishikawa (1.Research Center for Nano-Device and System, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2005.I-5-4