Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors

Toshiki Makimoto; Takatoshi Kido; Kazuhide Kumakura; Yoshitaka Taniyasu; Makoto Kasu; Nobuo Matsumoto

doi:https://doi.org/10.7567/SSDM.2005.I-6-3

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[I-6-3] Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors

Toshiki Makimoto, Takatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation, 2.Shonan Institute of Technology)

https://doi.org/10.7567/SSDM.2005.I-6-3

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