Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors

Toshiki Makimoto; Takatoshi Kido; Kazuhide Kumakura; Yoshitaka Taniyasu; Makoto Kasu; Nobuo Matsumoto

doi:https://doi.org/10.7567/SSDM.2005.I-6-3

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[I-6-3] Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors

Toshiki Makimoto、Takatoshi Kido、Kazuhide Kumakura、Yoshitaka Taniyasu、Makoto Kasu、Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation、2.Shonan Institute of Technology)

https://doi.org/10.7567/SSDM.2005.I-6-3

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