[I-6-4] p-InGaN/n-GaN Vertical Conducting Diodes on n+-SiC Substrate for High Power Electronic Device Applications

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2005.I-6-4